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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 30 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHTA64ZPT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION 3.5+0.2 7.0+0.3 *PNP SILICON Transistor 0.9+0.2 MARKING * ZGP 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. -30 -30 -10 -1000 2 +150 150 +150 V V V UNIT mA W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHTA64ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCE(sat) VBE(ON) fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS VCB = -30 V VEB = - 1 0 V IC = -10 mA; VCE = -5V IC = -100 mA; VCE =-5V IC = -100 mA; IB = -0.1 m A IC = -100 mA; VCE=5-V IC = -10 mA; VCE = 5 V; f = 100MHz - - 10000 20000 - - 125 MIN. MAX. -100 -100 - - -1.5 -2 - V V MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W |
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